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December 1998
NDT456P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance and provide superior
switching performance. These devices are particularly
suited for low voltage applications such as notebook
Features
-7.5 A, -30 V. R DS(ON) = 0.030 ? @ V GS = -10 V
R DS(ON) = 0.045 ? @ V GS = -4.5 V .
High density cell design for extremely low R DS(ON) .
High power and current handling capability in a widely
used surface mount package.
computer power management, battery powered circuits,
and DC motor control.
______________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
NDT456P
-30
±20
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
±7.5
A
- Pulsed
±20
P D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
(Note 1c)
1.3
1.1
T J ,T STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
? 1998 Fairchild Semiconductor Corporation
NDT456P Rev. F
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